Corsair CMY16GX3M4A2133C8 4GB vs Panram International Corporation D4N2400PS-8G 8GB

总分

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

总分

Panram International Corporation D4N2400PS-8G 8GB

Panram International Corporation D4N2400PS-8G 8GB

差异规格评论

差异

Corsair CMY16GX3M4A2133C8 4GB

需要考虑的原因
Corsair CMY16GX3M4A2133C8 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 25

左右 20% 更低的延时
更快的读取速度，GB/s

17 12.5

测试中的平均数值
更快的写入速度，GB/s

11.5 6.1

测试中的平均数值

Panram International Corporation D4N2400PS-8G 8GB

需要考虑的原因
Panram International Corporation D4N2400PS-8G 8GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMY16GX3M4A2133C8 4GB

Panram International Corporation D4N2400PS-8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 25
读取速度，GB/s

17.0 12.5
写入速度，GB/s

11.5 6.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3077 1858

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA81GU6DJR8N-WM 8GB

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Kingston XRGM6C-MIE 16GB

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A-DATA Technology DQKD1A08 1GB

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Kingston 9905403-174.A00LF 2GB

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Kingston 9905630-030.A00G 16GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Samsung M474A2K43BB1-CPB 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9905678-023.A00G 8GB

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Smart Modular SF4641G8CK8I6GKSEG 8GB

Smart Modular SF4641G8CK8I6GKSEG 8GB