RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Corsair CMY16GX3M4A2133C8 4GB
SK Hynix HMA851S6CJR6N-UH 4GB

Corsair CMY16GX3M4A2133C8 4GB vs SK Hynix HMA851S6CJR6N-UH 4GB

总分
star star star star star
Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

总分
star star star star star
SK Hynix HMA851S6CJR6N-UH 4GB

SK Hynix HMA851S6CJR6N-UH 4GB

差异 规格 评论

差异

Corsair CMY16GX3M4A2133C8 4GB 需要考虑的原因
Corsair CMY16GX3M4A2133C8 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 100
    左右 80% 更低的延时
  • 更快的读取速度，GB/s
    17 left arrow 15.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.5 left arrow 8.1
    测试中的平均数值
SK Hynix HMA851S6CJR6N-UH 4GB 需要考虑的原因
SK Hynix HMA851S6CJR6N-UH 4GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Corsair CMY16GX3M4A2133C8 4GB
SK Hynix HMA851S6CJR6N-UH 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    20 left arrow 100
  • 读取速度，GB/s
    17.0 left arrow 15.2
  • 写入速度，GB/s
    11.5 left arrow 8.1
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3077 left arrow 1479

Corsair CMY16GX3M4A2133C8 4GB RAM的比较

Kingston KHX2800C12D3/4GX 4GB
Corsair CMK8GX4M2A2133C13 4GB

SK Hynix HMA851S6CJR6N-UH 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLE16G4D32AEEA.K16FB 16GB
Crucial Technology BLE16G4D32AEEA.K16FB 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Kingston K6VDX7-HYD 8GB
Kingston K6VDX7-HYD 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology 9905625-004.A03LF 8GB
Micron Technology 9905625-004.A03LF 8GB
内存RAM
Kingston MSI26D4S9D8ME-16 16GB
Kingston MSI26D4S9D8ME-16 16GB
Crucial Technology CT8G4DFRA266.C8FE 8GB
Crucial Technology CT8G4DFRA266.C8FE 8GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMK64GX4M4C3200C16 16GB
Corsair CMK64GX4M4C3200C16 16GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Samsung M378A1G43TB1-CTD 8GB
Samsung M378A1G43TB1-CTD 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Ramaxel Technology RMSA3270MB76H8F2400 2GB
Ramaxel Technology RMSA3270MB76H8F2400 2GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Crucial Technology CB8GU2400.C8ET 8GB
Crucial Technology CB8GU2400.C8ET 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Asgard VMA41UH-MEC1U2AW1 16GB
Asgard VMA41UH-MEC1U2AW1 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
A-DATA Technology DDR4 2800 8GB
A-DATA Technology DDR4 2800 8GB
内存RAM