Corsair CMY8GX3M2A2133C8 4GB vs Neo Forza NMUD416E82-3600 16GB

总分

Corsair CMY8GX3M2A2133C8 4GB

Corsair CMY8GX3M2A2133C8 4GB

总分

Neo Forza NMUD416E82-3600 16GB

Neo Forza NMUD416E82-3600 16GB

差异规格评论

差异

Corsair CMY8GX3M2A2133C8 4GB

需要考虑的原因
Corsair CMY8GX3M2A2133C8 4GB

报告一个错误

低于PassMark测试中的延时，ns

19 27

左右 30% 更低的延时

Neo Forza NMUD416E82-3600 16GB

需要考虑的原因
Neo Forza NMUD416E82-3600 16GB

报告一个错误

更快的读取速度，GB/s

19.6 18.1

测试中的平均数值
更快的写入速度，GB/s

16.0 11.9

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2133C8 4GB

Neo Forza NMUD416E82-3600 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

19 27
读取速度，GB/s

18.1 19.6
写入速度，GB/s

11.9 16.0
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3040 3909

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Neo Forza NMUD416E82-3600 16GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Corsair CML8GX3M2A1600C9 4GB

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A-DATA Technology AO1P26KCST2-BWWS 16GB

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Kingston KVR533D2N4 512MB

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Kingston 99U5663-003.A00G 16GB

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Crucial Technology BL16G36C16U4W.M8FB1 16GB

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Samsung M393B1K70CH0-CH9 8GB

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G Skill Intl F4-3000C16-8GTZR 8GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Crucial Technology BLS8G4D240FSA.16FAD 8GB

Crucial Technology BLS8G4D240FSA.16FAD 8GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

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Samsung M471A1K43DB1-CTD 8GB

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Team Group Inc. Team-Elite-1333 4GB

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Corsair CMK16GX4M2Z2933C16 8GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB