Corsair CMY8GX3M2A2666C10 4GB vs A-DATA Technology AO1P32NC8T1-BCSS 8GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

A-DATA Technology AO1P32NC8T1-BCSS 8GB

A-DATA Technology AO1P32NC8T1-BCSS 8GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 39

左右 56% 更低的延时
更快的读取速度，GB/s

22.8 17.6

测试中的平均数值
更快的写入速度，GB/s

15.4 13.9

测试中的平均数值

A-DATA Technology AO1P32NC8T1-BCSS 8GB

需要考虑的原因
A-DATA Technology AO1P32NC8T1-BCSS 8GB

报告一个错误

更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

A-DATA Technology AO1P32NC8T1-BCSS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 39
读取速度，GB/s

22.8 17.6
写入速度，GB/s

15.4 13.9
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

3391 3046

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3600C16-16GVKC 16GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

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Corsair CMD64GX4M4B3000C15 16GB

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Crucial Technology BL8G30C15U4B.M8FE1 8GB

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Kingston 9965433-034.A00LF 4GB

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Corsair CMH128GX4M4E3200C16 32GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Kingston ACR512X64D3S13C9G 4GB

Kingston KWTHG4-MIE 16GB

Kingston KWTHG4-MIE 16GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

G Skill Intl F4-3800C14-16GTZN 16GB

G Skill Intl F4-3800C14-16GTZN 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

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AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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G Skill Intl F4-3466C16-8GTZ 8GB