Corsair CMY8GX3M2A2666C10 4GB vs Corsair CMK4GX4M1A2400C16 4GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

Corsair CMK4GX4M1A2400C16 4GB

Corsair CMK4GX4M1A2400C16 4GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 24

左右 29% 更低的延时
更快的读取速度，GB/s

22.8 15.7

测试中的平均数值
更快的写入速度，GB/s

15.4 11.1

测试中的平均数值

Corsair CMK4GX4M1A2400C16 4GB

需要考虑的原因
Corsair CMK4GX4M1A2400C16 4GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMK4GX4M1A2400C16 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 24
读取速度，GB/s

22.8 15.7
写入速度，GB/s

15.4 11.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3391 2491

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378A5244CB0-CTD 4GB

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Corsair CMY8GX3M2A2666C10 4GB

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Corsair CMK4GX4M1A2400C16 4GB

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Micron Technology 16ATF4G64AZ-2G6B1 32GB

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Samsung M393B2G70BH0-CH9 16GB

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Kingston 9905599-010.A00G 4GB

Kingston 9905599-010.A00G 4GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Golden Empire CL16-18-18 D4-2666 8GB

Golden Empire CL16-18-18 D4-2666 8GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

G Skill Intl F4-4600C18-8GTZR 8GB

G Skill Intl F4-4600C18-8GTZR 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Kingston X6TCK6-MIE 32GB

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