Corsair CMY8GX3M2A2666C10 4GB vs Corsair CMK8GX4M2B3866C18 4GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

Corsair CMK8GX4M2B3866C18 4GB

Corsair CMK8GX4M2B3866C18 4GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 28

左右 39% 更低的延时
更快的读取速度，GB/s

22.8 15.8

测试中的平均数值
更快的写入速度，GB/s

15.4 13.4

测试中的平均数值

Corsair CMK8GX4M2B3866C18 4GB

需要考虑的原因
Corsair CMK8GX4M2B3866C18 4GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMK8GX4M2B3866C18 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 28
读取速度，GB/s

22.8 15.8
写入速度，GB/s

15.4 13.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3391 2640

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston MSI24D4U7D8MH-16 16GB

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Avant Technology W642GU42J5213N 16GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

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A-DATA Technology VDQVE1B16 2GB

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Team Group Inc. TEAMGROUP-UD4-3000 8GB

Team Group Inc. TEAMGROUP-UD4-3000 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Crucial Technology BLS8G4D26BFSB.16FBD2 8GB

Crucial Technology BLS8G4D26BFSB.16FBD2 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Micron Technology 16ATF2G64AZ-2G3B1 16GB