Corsair CMY8GX3M2A2666C10 4GB vs Corsair CMSX16GX4M1A2666C18 16GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

Corsair CMSX16GX4M1A2666C18 16GB

Corsair CMSX16GX4M1A2666C18 16GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 34

左右 50% 更低的延时
更快的读取速度，GB/s

22.8 15.6

测试中的平均数值
更快的写入速度，GB/s

15.4 13.1

测试中的平均数值

Corsair CMSX16GX4M1A2666C18 16GB

需要考虑的原因
Corsair CMSX16GX4M1A2666C18 16GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMSX16GX4M1A2666C18 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 34
读取速度，GB/s

22.8 15.6
写入速度，GB/s

15.4 13.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3391 3043

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMSX16GX4M2A2400C16 8GB

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A-DATA Technology AM2L16BC4R1-B0CS 4GB

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SK Hynix HMA851U6DJR6N-WM 4GB

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Ramaxel Technology RMSA3260NA78HAF-2666 8GB

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Kingston 9965662-012.A01G 16GB

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G Skill Intl F4-2933C14-8GFX 8GB

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Samsung M393B1G70BH0-YK0 8GB

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Corsair CMK32GX4M4B3866C18 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Crucial Technology CT8G4DFS8266.C8FJ 8GB

Crucial Technology CT8G4DFS8266.C8FJ 8GB

Kingston 99U5471-025.A00LF 4GB

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Kingmax Semiconductor GLLF62F-C6---------- 4GB

Kingmax Semiconductor GLLF62F-C6---------- 4GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Transcend Information TS1GSH64V4B 8GB

Transcend Information TS1GSH64V4B 8GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Crucial Technology BLS16G4D32AESB.M16FE 16GB

Crucial Technology BLS16G4D32AESB.M16FE 16GB