Corsair CMY8GX3M2A2666C10 4GB vs Crucial Technology BLS16G4D240FSE.16FD 16GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

Crucial Technology BLS16G4D240FSE.16FD 16GB

Crucial Technology BLS16G4D240FSE.16FD 16GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 22

左右 23% 更低的延时
更快的读取速度，GB/s

22.8 16.1

测试中的平均数值
更快的写入速度，GB/s

15.4 8.3

测试中的平均数值

Crucial Technology BLS16G4D240FSE.16FD 16GB

需要考虑的原因
Crucial Technology BLS16G4D240FSE.16FD 16GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

Crucial Technology BLS16G4D240FSE.16FD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 22
读取速度，GB/s

22.8 16.1
写入速度，GB/s

15.4 8.3
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3391 2646

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

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Team Group Inc. Team-Elite-1333 4GB

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Team Group Inc. DDR4 3600 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 1

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Avant Technology J641GU42J9266NL 8GB

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Kingston KHX2133C13S4/8G 8GB

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology CT16G4SFRA266.C8FE 16GB

Crucial Technology CT16G4SFRA266.C8FE 16GB

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

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G Skill Intl F4-3600C16-8GTRG 8GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Corsair CMK8GX4M2B3866C18 4GB

Corsair CMK8GX4M2B3866C18 4GB