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Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-3200C16-8GTZ 8GB

Corsair CMY8GX3M2A2666C10 4GB vs G Skill Intl F4-3200C16-8GTZ 8GB

总分
star star star star star
Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分
star star star star star
G Skill Intl F4-3200C16-8GTZ 8GB

G Skill Intl F4-3200C16-8GTZ 8GB

差异 规格 评论

差异

Corsair CMY8GX3M2A2666C10 4GB 需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 26
    左右 35% 更低的延时
  • 更快的读取速度，GB/s
    22.8 left arrow 19.8
    测试中的平均数值
G Skill Intl F4-3200C16-8GTZ 8GB 需要考虑的原因
G Skill Intl F4-3200C16-8GTZ 8GB
报告一个错误
  • 更快的写入速度，GB/s
    15.8 left arrow 15.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-3200C16-8GTZ 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    17 left arrow 26
  • 读取速度，GB/s
    22.8 left arrow 19.8
  • 写入速度，GB/s
    15.4 left arrow 15.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3391 left arrow 3635

Corsair CMY8GX3M2A2666C10 4GB RAM的比较

Micron Technology 4ATF1G64AZ-3G2B1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB

G Skill Intl F4-3200C16-8GTZ 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Micron Technology 9ASF51272PZ-2G1A2 4GB
Micron Technology 9ASF51272PZ-2G1A2 4GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-3200C16-8GTZ 8GB
G Skill Intl F4-3200C16-8GTZ 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston KHX3200C18D4/16G 16GB
Kingston KHX3200C18D4/16G 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
A-DATA Technology DDR4 3600 2OZ 8GB
A-DATA Technology DDR4 3600 2OZ 8GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
G Skill Intl F4-4000C16-16GTRS 16GB
G Skill Intl F4-4000C16-16GTRS 16GB
内存RAM
Corsair CMSO4GX3M1A1600C11 4GB
Corsair CMSO4GX3M1A1600C11 4GB
Corsair CMSO4GX3M1A1600C11 4GB
Corsair CMSO4GX3M1A1600C11 4GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-3400C16-4GRBD 4GB
G Skill Intl F4-3400C16-4GRBD 4GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Samsung M393A1G40EB1-CRC 8GB
Samsung M393A1G40EB1-CRC 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
G Skill Intl F4-2400C15Z8GNT 8GB
G Skill Intl F4-2400C15Z8GNT 8GB
内存RAM
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
Crucial Technology BLS8G4D240FSCK.8FBD 8GB
Crucial Technology BLS8G4D240FSCK.8FBD 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-3000C16-8GSXKB 8GB
G Skill Intl F4-3000C16-8GSXKB 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3600C16-8GTZ 8GB
G Skill Intl F4-3600C16-8GTZ 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
INTENSO 5641152 4GB
INTENSO 5641152 4GB
内存RAM