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Corsair CMY8GX3M2A2666C10 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB
比较
Corsair CMY8GX3M2A2666C10 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB
总分
Corsair CMY8GX3M2A2666C10 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB
差异
规格
评论
差异
需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB
报告一个错误
低于PassMark测试中的延时,ns
17
28
左右 39% 更低的延时
更快的读取速度,GB/s
22.8
13.8
测试中的平均数值
更快的写入速度,GB/s
15.4
10.4
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB
报告一个错误
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Corsair CMY8GX3M2A2666C10 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
17
28
读取速度,GB/s
22.8
13.8
写入速度,GB/s
15.4
10.4
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
3391
2354
Corsair CMY8GX3M2A2666C10 4GB RAM的比较
Micron Technology 4ATF1G64AZ-3G2B1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB RAM的比较
AMD R748G2133U2S 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Micron Technology AFLD48EH1P 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston 9905665-020.A00G 4GB
报告一个错误
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Bug description
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