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Corsair CMY8GX3M2A2666C10 4GB
InnoDisk Corporation 16GB

Corsair CMY8GX3M2A2666C10 4GB vs InnoDisk Corporation 16GB

总分
star star star star star
Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分
star star star star star
InnoDisk Corporation 16GB

InnoDisk Corporation 16GB

差异 规格 评论

差异

Corsair CMY8GX3M2A2666C10 4GB 需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 38
    左右 55% 更低的延时
  • 更快的读取速度，GB/s
    22.8 left arrow 7.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.4 left arrow 8.2
    测试中的平均数值
InnoDisk Corporation 16GB 需要考虑的原因
InnoDisk Corporation 16GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Corsair CMY8GX3M2A2666C10 4GB
InnoDisk Corporation 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    17 left arrow 38
  • 读取速度，GB/s
    22.8 left arrow 7.7
  • 写入速度，GB/s
    15.4 left arrow 8.2
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3391 left arrow 2163

Corsair CMY8GX3M2A2666C10 4GB RAM的比较

Micron Technology 4ATF1G64AZ-3G2B1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB

InnoDisk Corporation 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
InnoDisk Corporation 16GB
InnoDisk Corporation 16GB
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内存RAM
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Kingston 9965433-034.A00LF 4GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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G Skill Intl F4-2800C16-8GRR 8GB
内存RAM