Corsair CMY8GX3M2A2666C10 4GB vs Kingston 9905712-001.B00G 16GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

Kingston 9905712-001.B00G 16GB

Kingston 9905712-001.B00G 16GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 47

左右 64% 更低的延时
更快的读取速度，GB/s

22.8 14.7

测试中的平均数值
更快的写入速度，GB/s

15.4 8.3

测试中的平均数值

Kingston 9905712-001.B00G 16GB

需要考虑的原因
Kingston 9905712-001.B00G 16GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

Kingston 9905712-001.B00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 47
读取速度，GB/s

22.8 14.7
写入速度，GB/s

15.4 8.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3391 2201

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Apacer Technology 78.B1GET.AU00C 4GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

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Samsung M378B5673FH0-CH9 2GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Micron Technology 18HTF12872AY-800F1 1GB

Crucial Technology CT8G4DFS632A.M4FB 8GB

Crucial Technology CT8G4DFS632A.M4FB 8GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Kingston XRMWRN-MIE2 16GB

Kingston XRMWRN-MIE2 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-4000C17-16GTRGB 16GB

G Skill Intl F4-4000C17-16GTRGB 16GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Eudar Technology Inc. 8GXMP3000CL16 8GB

Eudar Technology Inc. 8GXMP3000CL16 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

SK Hynix HMAA1GU6CJR6N-XN 8GB

SK Hynix HMAA1GU6CJR6N-XN 8GB