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Corsair CMY8GX3M2A2666C10 4GB
Panram International Corporation W4U2666P-8G 8GB

Corsair CMY8GX3M2A2666C10 4GB vs Panram International Corporation W4U2666P-8G 8GB

总分
star star star star star
Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分
star star star star star
Panram International Corporation W4U2666P-8G 8GB

Panram International Corporation W4U2666P-8G 8GB

差异 规格 评论

差异

Corsair CMY8GX3M2A2666C10 4GB 需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 28
    左右 39% 更低的延时
  • 更快的读取速度，GB/s
    22.8 left arrow 17.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.4 left arrow 14.2
    测试中的平均数值
Panram International Corporation W4U2666P-8G 8GB 需要考虑的原因
Panram International Corporation W4U2666P-8G 8GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Corsair CMY8GX3M2A2666C10 4GB
Panram International Corporation W4U2666P-8G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    17 left arrow 28
  • 读取速度，GB/s
    22.8 left arrow 17.3
  • 写入速度，GB/s
    15.4 left arrow 14.2
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3391 left arrow 3366

Corsair CMY8GX3M2A2666C10 4GB RAM的比较

Micron Technology 4ATF1G64AZ-3G2B1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB

Panram International Corporation W4U2666P-8G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
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内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
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内存RAM
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内存RAM
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TwinMOS 8DHE3MN8-HATP 2GB
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