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Corsair CMY8GX3M2A2666C10 4GB
Samsung M471A1K43BB0-CPB 8GB

Corsair CMY8GX3M2A2666C10 4GB vs Samsung M471A1K43BB0-CPB 8GB

总分
star star star star star
Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分
star star star star star
Samsung M471A1K43BB0-CPB 8GB

Samsung M471A1K43BB0-CPB 8GB

差异 规格 评论

差异

Corsair CMY8GX3M2A2666C10 4GB 需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 38
    左右 55% 更低的延时
  • 更快的读取速度，GB/s
    22.8 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.4 left arrow 9.3
    测试中的平均数值
Samsung M471A1K43BB0-CPB 8GB 需要考虑的原因
Samsung M471A1K43BB0-CPB 8GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Corsair CMY8GX3M2A2666C10 4GB
Samsung M471A1K43BB0-CPB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    17 left arrow 38
  • 读取速度，GB/s
    22.8 left arrow 13.4
  • 写入速度，GB/s
    15.4 left arrow 9.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3391 left arrow 2298

Corsair CMY8GX3M2A2666C10 4GB RAM的比较

Micron Technology 4ATF1G64AZ-3G2B1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB

Samsung M471A1K43BB0-CPB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
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内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Samsung M471A1K43BB0-CPB 8GB
Samsung M471A1K43BB0-CPB 8GB
内存RAM
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMX4GX3M1A1333C9 4GB
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Crucial Technology CT16G4SFD8213.C16FAD 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
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内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
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Transcend Information JM3200HLG-8G 8GB
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内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
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Kingston X3XCFP-HYA 8GB
内存RAM
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Apacer Technology 78.01GA0.9K5 1GB
G Skill Intl F4-3333C16-16GTZB 16GB
G Skill Intl F4-3333C16-16GTZB 16GB
内存RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
G Skill Intl F4-2133C15-4GRR 4GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
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Avant Technology J641GU42J7240N3 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Teclast TLD416G26A30 16GB
Teclast TLD416G26A30 16GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
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Kingston KHX2666C15/16GX 16GB
内存RAM
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AMD R538G1601U2S 8GB
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SK Hynix HMA451R7MFR8N-TF 4GB
内存RAM
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Crucial Technology BL8G32C16U4R.M8FE1 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Gold Key Technology Co Ltd NMUD480E86-3200D 8GB
Gold Key Technology Co Ltd NMUD480E86-3200D 8GB
内存RAM