Corsair CMY8GX3M2A2666C10 4GB vs Samsung M471A1K43CB1-CRCR 8GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

Samsung M471A1K43CB1-CRCR 8GB

Samsung M471A1K43CB1-CRCR 8GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 23

左右 26% 更低的延时
更快的读取速度，GB/s

22.8 14.7

测试中的平均数值
更快的写入速度，GB/s

15.4 6.9

测试中的平均数值

Samsung M471A1K43CB1-CRCR 8GB

需要考虑的原因
Samsung M471A1K43CB1-CRCR 8GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

Samsung M471A1K43CB1-CRCR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 23
读取速度，GB/s

22.8 14.7
写入速度，GB/s

15.4 6.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3391 2231

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Hexon Technology Pte Ltd HEXON 1GB

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Kingston 8ATF1G64AZ-2G1B1 8GB

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Kingston 9905625-066.A00G 16GB

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SK Hynix HMT351U6CFR8C-H9 4GB

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Eudar Technology Inc. 8GXMP3000CL16 8GB

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Crucial Technology BL16G36C16U4RL.M16FE 16GB

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AMD R538G1601U2S 8GB

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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SK Hynix HMAA2GU6CJR8N-XN 16GB

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A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Kingston 9965589-035.D00G 16GB

Kingston 9965589-035.D00G 16GB

Kingston 99U5471-052.A00LF 8GB

Kingston 99U5471-052.A00LF 8GB

SK Hynix HMA81GU7CJR8N-VK 8GB

SK Hynix HMA81GU7CJR8N-VK 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Avant Technology W641GU42J7240NB 8GB

Avant Technology W641GU42J7240NB 8GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Corsair CMK64GX4M8X4200C19 8GB

Corsair CMK64GX4M8X4200C19 8GB