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Corsair CMY8GX3M2A2666C10 4GB
Samsung V-GeN D4S4GL30A16TS5 4GB

Corsair CMY8GX3M2A2666C10 4GB vs Samsung V-GeN D4S4GL30A16TS5 4GB

总分
star star star star star
Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分
star star star star star
Samsung V-GeN D4S4GL30A16TS5 4GB

Samsung V-GeN D4S4GL30A16TS5 4GB

差异 规格 评论

差异

Corsair CMY8GX3M2A2666C10 4GB 需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 62
    左右 73% 更低的延时
  • 更快的读取速度，GB/s
    22.8 left arrow 16.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.4 left arrow 7.0
    测试中的平均数值
Samsung V-GeN D4S4GL30A16TS5 4GB 需要考虑的原因
Samsung V-GeN D4S4GL30A16TS5 4GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Corsair CMY8GX3M2A2666C10 4GB
Samsung V-GeN D4S4GL30A16TS5 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    17 left arrow 62
  • 读取速度，GB/s
    22.8 left arrow 16.7
  • 写入速度，GB/s
    15.4 left arrow 7.0
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3391 left arrow 1808

Corsair CMY8GX3M2A2666C10 4GB RAM的比较

Micron Technology 4ATF1G64AZ-3G2B1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB

Samsung V-GeN D4S4GL30A16TS5 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Corsair CMK32GX4M2D3600C18 16GB
Corsair CMK32GX4M2D3600C18 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
KingSpec KingSpec 16GB
KingSpec KingSpec 16GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Samsung V-GeN D4S4GL30A16TS5 4GB
内存RAM
Kingston ACR256X64D2S800C6 2GB
Kingston ACR256X64D2S800C6 2GB
Kingston ACR256X64D2S800C6 2GB
Kingston ACR256X64D2S800C6 2GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLS4G4D240FSA.8FARG 4GB
Crucial Technology BLS4G4D240FSA.8FARG 4GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Kingston X74R9W-MIE 8GB
Kingston X74R9W-MIE 8GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
INTENSO 5641152 4GB
INTENSO 5641152 4GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Kingston ACR24D4S7S8MB-8 8GB
Kingston ACR24D4S7S8MB-8 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology BLS16G4D30AESE.M16FE 16GB
Crucial Technology BLS16G4D30AESE.M16FE 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston MSI24D4U7S8MB-8 8GB
Kingston MSI24D4U7S8MB-8 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-2666C19-16GIS 16GB
G Skill Intl F4-2666C19-16GIS 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Micron Technology 16ATF2G64AZ-3G2J1 16GB
Micron Technology 16ATF2G64AZ-3G2J1 16GB
内存RAM