Corsair CMZ16GX3M2A1866C9 8GB vs Corsair CMZ32GX3M4X1600C10 8GB

总分

Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ16GX3M2A1866C9 8GB

总分

Corsair CMZ32GX3M4X1600C10 8GB

Corsair CMZ32GX3M4X1600C10 8GB

差异规格评论

差异

Corsair CMZ16GX3M2A1866C9 8GB

需要考虑的原因
Corsair CMZ16GX3M2A1866C9 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 42

左右 7% 更低的延时
更快的读取速度，GB/s

14 13.8

测试中的平均数值

Corsair CMZ32GX3M4X1600C10 8GB

需要考虑的原因
Corsair CMZ32GX3M4X1600C10 8GB

报告一个错误

更快的写入速度，GB/s

9.1 9.0

测试中的平均数值

规格

完整的技术规格清单

Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ32GX3M4X1600C10 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

39 42
读取速度，GB/s

14.0 13.8
写入速度，GB/s

9.0 9.1
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC3-10600, 1.5V, CAS Supported: 6 7 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2489 2536

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMZ16GX3M2A1866C9 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

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SK Hynix HMA41GR7BJR4N-UH 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

G Skill Intl F4-4133C19-8GTZKWC 8GB

G Skill Intl F4-4133C19-8GTZKWC 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-3200C15-16GTZKW 16GB

G Skill Intl F4-3200C15-16GTZKW 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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G Skill Intl F4-3200C15-16GTZKY 16GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

V-Color Technology Inc. TA48G36S818BN 8GB

V-Color Technology Inc. TA48G36S818BN 8GB