Corsair CMZ16GX3M2A2400C10 8GB vs Corsair CMY16GX3M2A2400C11 8GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

Corsair CMY16GX3M2A2400C11 8GB

Corsair CMY16GX3M2A2400C11 8GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

Corsair CMY16GX3M2A2400C11 8GB

需要考虑的原因
Corsair CMY16GX3M2A2400C11 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 37

左右 -6% 更低的延时
更快的读取速度，GB/s

16.3 11.4

测试中的平均数值
更快的写入速度，GB/s

10.7 7.4

测试中的平均数值

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMY16GX3M2A2400C11 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

37 35
读取速度，GB/s

11.4 16.3
写入速度，GB/s

7.4 10.7
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC3-10600, 1.5V, CAS Supported: 5 6 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

1683 2821

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF1G64HZ-2G1B1 8GB

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SK Hynix HMT351U6CFR8C-H9 4GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Samsung M378A5143EB1-CPB 4GB

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Kingston KVR533D2N4 512MB

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Crucial Technology CT16G4SFD832A.C16FP 16GB

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Crucial Technology BLS16G4D30CEST.16FD 16GB

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Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

A-DATA Technology DDR4 3000 2OZ 8GB

A-DATA Technology DDR4 3000 2OZ 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Crucial Technology BLS8G4S26BFSD.16FBD2 8GB

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Kingston KP223C-ELD 2GB

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SK Hynix HMT325U6BFR8C-H9 2GB

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Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

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