Corsair CMZ32GX3M4A1866C9 8GB vs G Skill Intl F4-3200C14-16GVK 16GB

总分

Corsair CMZ32GX3M4A1866C9 8GB

Corsair CMZ32GX3M4A1866C9 8GB

总分

G Skill Intl F4-3200C14-16GVK 16GB

G Skill Intl F4-3200C14-16GVK 16GB

差异规格评论

差异

Corsair CMZ32GX3M4A1866C9 8GB

需要考虑的原因
Corsair CMZ32GX3M4A1866C9 8GB

报告一个错误

G Skill Intl F4-3200C14-16GVK 16GB

需要考虑的原因
G Skill Intl F4-3200C14-16GVK 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 35

左右 -21% 更低的延时
更快的读取速度，GB/s

20 13.9

测试中的平均数值
更快的写入速度，GB/s

15.8 10.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMZ32GX3M4A1866C9 8GB

G Skill Intl F4-3200C14-16GVK 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 29
读取速度，GB/s

13.9 20.0
写入速度，GB/s

10.1 15.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2696 3831

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMY16GX3M4A2133C8 4GB

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SpecTek Incorporated 16G2666CL19 16GB

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Samsung M393B1K70QB0-CK0 8GB

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Kingston HP26D4U9S8MD-8 8GB

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Micron Technology 16G2666CL19 16GB

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Crucial Technology 16G4UD2400.C16BD1 16GB

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Kingston KF548C38-16 16GB

Crucial Technology BL16G26C16U4B.16FE 16GB

Crucial Technology BL16G26C16U4B.16FE 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology CT16G4DFD8266.C16FE 16GB

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Crucial Technology CT8G4DFS8213.M8FB 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Samsung M386B4G70DM0-CMA4 32GB