Corsair VS1GB800D2 1GB vs Micron Technology 16ATF4G64AZ-3G2E1 32GB

总分

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

总分

Micron Technology 16ATF4G64AZ-3G2E1 32GB

Micron Technology 16ATF4G64AZ-3G2E1 32GB

差异规格评论

差异

Corsair VS1GB800D2 1GB

需要考虑的原因
Corsair VS1GB800D2 1GB

报告一个错误

更快的读取速度，GB/s

4 16.2

测试中的平均数值

Micron Technology 16ATF4G64AZ-3G2E1 32GB

需要考虑的原因
Micron Technology 16ATF4G64AZ-3G2E1 32GB

报告一个错误

低于PassMark测试中的延时，ns

35 47

左右 -34% 更低的延时
更快的写入速度，GB/s

12.5 1,361.1

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Corsair VS1GB800D2 1GB

Micron Technology 16ATF4G64AZ-3G2E1 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

47 35
读取速度，GB/s

4,680.7 16.2
写入速度，GB/s

1,361.1 12.5
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

460 3242

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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INTENSO GKE800UD102408-2133 8GB

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Kingston ACR512X64D3S13C9G 4GB

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Corsair CMR32GX4M4C3000C15 8GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Transcend Information JM2666HSB-16G 16GB

Transcend Information JM2666HSB-16G 16GB