Corsair VS1GB800D2 1GB vs Patriot Memory (PDP Systems) 4000 C19 Series 8GB

总分

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

总分

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

差异规格评论

差异

Corsair VS1GB800D2 1GB

需要考虑的原因
Corsair VS1GB800D2 1GB

报告一个错误

更快的读取速度，GB/s

4 19.7

测试中的平均数值

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 4000 C19 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 47

左右 -81% 更低的延时
更快的写入速度，GB/s

17.0 1,361.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Corsair VS1GB800D2 1GB

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

47 26
读取速度，GB/s

4,680.7 19.7
写入速度，GB/s

1,361.1 17.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

460 3842

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4SFRA32A.C16FP 16GB

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Corsair CML8GX3M2A1600C9 4GB

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Crucial Technology CB8GS2400.C8JT 8GB

Samsung M3 93T5750CZA-CE6 2GB

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Corsair CMD16GX3M2A1866C9 8GB

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Crucial Technology CT8G4DFD8213.C16FAD1 8GB

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Samsung M391B5673EH1-CH9 2GB

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G Skill Intl F4-3200C15-16GTZKW 16GB