Corsair VS1GSDS533D2 1GB vs Corsair CMK32GX4M2Z3200C16 16GB

总分

Corsair VS1GSDS533D2 1GB

Corsair VS1GSDS533D2 1GB

总分

Corsair CMK32GX4M2Z3200C16 16GB

Corsair CMK32GX4M2Z3200C16 16GB

差异规格评论

差异

Corsair VS1GSDS533D2 1GB

需要考虑的原因
Corsair VS1GSDS533D2 1GB

报告一个错误

更快的写入速度，GB/s

895.9 15.2

测试中的平均数值

Corsair CMK32GX4M2Z3200C16 16GB

需要考虑的原因
Corsair CMK32GX4M2Z3200C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 86

左右 -187% 更低的延时
更快的读取速度，GB/s

17.8 1

测试中的平均数值
更高的内存带宽，mbps

21300 4200

左右 5.07 更高的带宽

规格

完整的技术规格清单

Corsair VS1GSDS533D2 1GB

Corsair CMK32GX4M2Z3200C16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

86 30
读取速度，GB/s

1,761.9 17.8
写入速度，GB/s

895.9 15.2
内存带宽，mbps

4200 21300

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

4-4-4-12 / 533 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

287 3628

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair VS1GSDS533D2 1GB

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Samsung M393B1K70CH0-CH9 8GB

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Mushkin 991988 (996988) 4GB

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Crucial Technology CT4G4DFS8266.M8FF 4GB

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Corsair CML8GX3M2A1600C9 4GB

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

Crucial Technology CT16G4DFRA32A.C16FP 16GB

Crucial Technology CT16G4DFRA32A.C16FP 16GB

Crucial Technology BL8G26C16U4W.8FD 8GB

Crucial Technology BL8G26C16U4W.8FD 8GB

SK Hynix HMA81GS6DJR8N-VK 8GB

SK Hynix HMA81GS6DJR8N-VK 8GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB