Corsair VS2GB1333D4 2GB vs Corsair CMW32GX4M2E3200C16 16GB

总分

Corsair VS2GB1333D4 2GB

Corsair VS2GB1333D4 2GB

总分

Corsair CMW32GX4M2E3200C16 16GB

Corsair CMW32GX4M2E3200C16 16GB

差异规格评论

差异

Corsair VS2GB1333D4 2GB

需要考虑的原因
Corsair VS2GB1333D4 2GB

报告一个错误

低于PassMark测试中的延时，ns

25 31

左右 19% 更低的延时

Corsair CMW32GX4M2E3200C16 16GB

需要考虑的原因
Corsair CMW32GX4M2E3200C16 16GB

报告一个错误

更快的读取速度，GB/s

17.9 12.9

测试中的平均数值
更快的写入速度，GB/s

14.2 7.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair VS2GB1333D4 2GB

Corsair CMW32GX4M2E3200C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 31
读取速度，GB/s

12.9 17.9
写入速度，GB/s

7.9 14.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1947 3538

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N

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SK Hynix HMA81GS6JJR8N-VK 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

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Chun Well Technology Holding Limited ND4U0840180BRPDE 8

Kreton Corporation 51624xxxx68x35xxxx 2GB

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Apacer Technology 78.C1GM3.C7Z0B 8GB

Apacer Technology 78.C1GM3.C7Z0B 8GB