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Corsair VS2GB1333D4 2GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB

Corsair VS2GB1333D4 2GB vs Crucial Technology CT8G4SFD8213.C16FBD1 8GB

总分
star star star star star
Corsair VS2GB1333D4 2GB

Corsair VS2GB1333D4 2GB

总分
star star star star star
Crucial Technology CT8G4SFD8213.C16FBD1 8GB

Crucial Technology CT8G4SFD8213.C16FBD1 8GB

差异 规格 评论

差异

Corsair VS2GB1333D4 2GB 需要考虑的原因
Corsair VS2GB1333D4 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 36
    左右 31% 更低的延时
Crucial Technology CT8G4SFD8213.C16FBD1 8GB 需要考虑的原因
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14 left arrow 12.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.1 left arrow 7.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Corsair VS2GB1333D4 2GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 36
  • 读取速度，GB/s
    12.9 left arrow 14.0
  • 写入速度，GB/s
    7.9 left arrow 10.1
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1947 left arrow 2416

Corsair VS2GB1333D4 2GB RAM的比较

Corsair VS2GB1333D3 2GB
Avant Technology W641GU67J5213N8 8GB

Crucial Technology CT8G4SFD8213.C16FBD1 8GB RAM的比较

SK Hynix HYMP112U64CP8-S5 1GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Mushkin 99[2/7/4]205F 8GB
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内存RAM
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Ramaxel Technology RMN1740HC48D8F667A 2GB
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Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N
内存RAM
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SK Hynix HMA82GS6DJR8N-XN 16GB
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内存RAM
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