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Corsair VSA2GSDS667C4 2GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Corsair VSA2GSDS667C4 2GB vs Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

总分
star star star star star
Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

总分
star star star star star
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

差异 规格 评论

差异

Corsair VSA2GSDS667C4 2GB 需要考虑的原因
Corsair VSA2GSDS667C4 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17.3
    测试中的平均数值
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB 需要考虑的原因
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 51
    左右 -50% 更低的延时
  • 更快的写入速度，GB/s
    14.5 left arrow 1,839.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Corsair VSA2GSDS667C4 2GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 34
  • 读取速度，GB/s
    4,246.9 left arrow 17.3
  • 写入速度，GB/s
    1,839.1 left arrow 14.5
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 4 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    721 left arrow 3606

Corsair VSA2GSDS667C4 2GB RAM的比较

SK Hynix HYMP112S64CP6-S6 1GB
Gloway International (HK) STK4U2400D17161C 16GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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内存RAM
Corsair VSA2GSDS667C4 2GB
Corsair VSA2GSDS667C4 2GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600
内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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