Corsair VSA2GSDS667C4 2GB vs Crucial Technology BLS8G4D32AESEK.M8FE1 8GB

总分

Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

总分

Crucial Technology BLS8G4D32AESEK.M8FE1 8GB

Crucial Technology BLS8G4D32AESEK.M8FE1 8GB

差异规格评论

差异

Corsair VSA2GSDS667C4 2GB

需要考虑的原因
Corsair VSA2GSDS667C4 2GB

报告一个错误

更快的读取速度，GB/s

4 17.3

测试中的平均数值

Crucial Technology BLS8G4D32AESEK.M8FE1 8GB

需要考虑的原因
Crucial Technology BLS8G4D32AESEK.M8FE1 8GB

报告一个错误

低于PassMark测试中的延时，ns

44 51

左右 -16% 更低的延时
更快的写入速度，GB/s

10.8 1,839.1

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Corsair VSA2GSDS667C4 2GB

Crucial Technology BLS8G4D32AESEK.M8FE1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

51 44
读取速度，GB/s

4,246.9 17.3
写入速度，GB/s

1,839.1 10.8
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 4 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

721 2523

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Crucial Technology CT102464BF160B.C16 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N

Samsung M471B1G73QH0-YK0 8GB

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Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

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Kingston ACR512X64D3S13C9G 4GB

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Corsair CM4X8GD3000C15K4 8GB

Corsair CM4X8GD3000C15K4 8GB