Corsair VSA2GSDS667C4 2GB vs Team Group Inc. DDR4 3600 8GB

总分

Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

总分

Team Group Inc. DDR4 3600 8GB

Team Group Inc. DDR4 3600 8GB

差异规格评论

差异

Corsair VSA2GSDS667C4 2GB

需要考虑的原因
Corsair VSA2GSDS667C4 2GB

报告一个错误

低于PassMark测试中的延时，ns

51 64

左右 20% 更低的延时
更快的读取速度，GB/s

4 17

测试中的平均数值

Team Group Inc. DDR4 3600 8GB

需要考虑的原因
Team Group Inc. DDR4 3600 8GB

报告一个错误

更快的写入速度，GB/s

8.8 1,839.1

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Corsair VSA2GSDS667C4 2GB

Team Group Inc. DDR4 3600 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

51 64
读取速度，GB/s

4,246.9 17.0
写入速度，GB/s

1,839.1 8.8
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 4 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

721 2103

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DDR4 3200 2OZ 4GB

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A-DATA Technology DQKD1A08 1GB

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Kingston KHX2800C14D4/4GX 4GB

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A-DATA Technology AD73I1B1672EG 2GB

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Samsung M471A2K43CB1-CRC 16GB

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Patriot Memory (PDP Systems) 2400 C16 Series 16GB

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Corsair VSA2GSDS667C4 2GB

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Team Group Inc. DDR4 3600 8GB

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ASint Technology SSA302G08-EGN1C 4GB

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SK Hynix HMT425S6CFR6A-PB 2GB

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G Skill Intl F3-1866C8-8GTX 8GB

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Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

G Skill Intl F4-3200C14-16GTZKO 16GB

G Skill Intl F4-3200C14-16GTZKO 16GB

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Maxsun MSD48G26Q3 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Kingston KVR26N19D8/16 16GB

Kingston KVR26N19D8/16 16GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Kingston KHX2400C14/16G 16GB

Kingston KHX2400C14/16G 16GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

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Transcend Information TS512MLH64V1H 4GB