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Crucial Technology BLE4G3D1608DE1TX0. 4GB
Avant Technology W642GU44J2320NC 16GB
比较
Crucial Technology BLE4G3D1608DE1TX0. 4GB vs Avant Technology W642GU44J2320NC 16GB
总分
Crucial Technology BLE4G3D1608DE1TX0. 4GB
总分
Avant Technology W642GU44J2320NC 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLE4G3D1608DE1TX0. 4GB
报告一个错误
需要考虑的原因
Avant Technology W642GU44J2320NC 16GB
报告一个错误
低于PassMark测试中的延时,ns
32
34
左右 -6% 更低的延时
更快的读取速度,GB/s
19.5
16.2
测试中的平均数值
更快的写入速度,GB/s
14.6
9.7
测试中的平均数值
更高的内存带宽,mbps
25600
10600
左右 2.42 更高的带宽
规格
完整的技术规格清单
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Avant Technology W642GU44J2320NC 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
34
32
读取速度,GB/s
16.2
19.5
写入速度,GB/s
9.7
14.6
内存带宽,mbps
10600
25600
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2636
3572
Crucial Technology BLE4G3D1608DE1TX0. 4GB RAM的比较
Kingston HX316C10F/4 4GB
Corsair CM4X4GF2666Z16K4 4GB
Avant Technology W642GU44J2320NC 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
A-DATA Technology DQVE1908 512MB
Corsair CMW32GX4M2C3000C15 16GB
SK Hynix HMA451U6AFR8N-TF 4GB
Corsair CMG16GX4M2D3600C18 8GB
SK Hynix HYMP112U64CP8-S6 1GB
Corsair CMW32GX4M4D3600C18 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Apacer Technology 78.CAGP7.AZ20B 8GB
A-DATA Technology DQVE1908 512MB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
Kingston KHX3200C18D4/8G 8GB
Corsair CMD32GX4M4A2666C15 8GB
Corsair CMSX16GX4M2A2400C16 8GB
Kingston ACR24D4S7S8MB-8 8GB
Corsair CMD16GX3M2A1866C9 8GB
G Skill Intl F4-4266C17-16GTZRB 16GB
Samsung M393B5170FH0-CH9 4GB
Corsair CMK128GX4M8A2666C16 16GB
Kingston 9905471-006.A00LF 4GB
Super Talent F24UB16GV 16GB
Samsung M3 78T5663RZ3-CE6 2GB
G Skill Intl F4-2400C17-4GNT 4GB
Kingston 99U5428-101.A00LF 8GB
Micron Technology 8ATF1G64HZ-2G6H1 8GB
Samsung M3 93T5750CZA-CE6 2GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
SK Hynix HMT425S6CFR6A-PB 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
报告一个错误
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Bug description
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