Crucial Technology BLE4G3D1608DE1TX0. 4GB vs Crucial Technology BL16G36C16U4R.M16FE1 16GB

总分

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

总分

Crucial Technology BL16G36C16U4R.M16FE1 16GB

Crucial Technology BL16G36C16U4R.M16FE1 16GB

差异规格评论

差异

Crucial Technology BLE4G3D1608DE1TX0. 4GB

需要考虑的原因
Crucial Technology BLE4G3D1608DE1TX0. 4GB

报告一个错误

Crucial Technology BL16G36C16U4R.M16FE1 16GB

需要考虑的原因
Crucial Technology BL16G36C16U4R.M16FE1 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 34

左右 -31% 更低的延时
更快的读取速度，GB/s

17.7 16.2

测试中的平均数值
更快的写入速度，GB/s

14.9 9.7

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BL16G36C16U4R.M16FE1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 26
读取速度，GB/s

16.2 17.7
写入速度，GB/s

9.7 14.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2636 3692

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KHX2400C15/8G 8GB

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Corsair CMSX4GX3M1A1600C9 4GB

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Corsair CML16GX3M2A1600C10 8GB

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G Skill Intl F4-3600C14-8GTZRA 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

G Skill Intl F4-4400C19-8GTZKK 8GB

G Skill Intl F4-4400C19-8GTZKK 8GB

Kingston 99U5471-012.A00LF 4GB

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Samsung M471A2K43CB1-CRCR 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Kingmax Semiconductor GLMH23F-18MCIA------ 16GB

Kingmax Semiconductor GLMH23F-18MCIA------ 16GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Corsair CM4X16GE2933C19S2 16MB

Corsair CM4X16GE2933C19S2 16MB