Crucial Technology BLE4G3D1608DE1TX0. 4GB vs Crucial Technology CT8G4SFS824A.M8FD 8GB

总分

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

总分

Crucial Technology CT8G4SFS824A.M8FD 8GB

Crucial Technology CT8G4SFS824A.M8FD 8GB

差异规格评论

差异

Crucial Technology BLE4G3D1608DE1TX0. 4GB

需要考虑的原因
Crucial Technology BLE4G3D1608DE1TX0. 4GB

报告一个错误

低于PassMark测试中的延时，ns

34 36

左右 6% 更低的延时
更快的读取速度，GB/s

16.2 14.9

测试中的平均数值

Crucial Technology CT8G4SFS824A.M8FD 8GB

需要考虑的原因
Crucial Technology CT8G4SFS824A.M8FD 8GB

报告一个错误

更快的写入速度，GB/s

9.8 9.7

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology CT8G4SFS824A.M8FD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 36
读取速度，GB/s

16.2 14.9
写入速度，GB/s

9.7 9.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2636 2415

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Corsair CMD32GX4M4B3333C16 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Kingston ASU21D4U5S8MB-8 8GB

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G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

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SK Hynix HMA41GS6AFR8N-TF 8GB

SK Hynix HMA41GS6AFR8N-TF 8GB