RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB vs Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB

总分
star star star star star
Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

总分
star star star star star
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB

Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB

差异 规格 评论

差异

Crucial Technology BLE4G3D1608DE1TX0. 4GB 需要考虑的原因
Crucial Technology BLE4G3D1608DE1TX0. 4GB
报告一个错误
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB 需要考虑的原因
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 34
    左右 -17% 更低的延时
  • 更快的读取速度，GB/s
    18.7 left arrow 16.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.9 left arrow 9.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    34 left arrow 29
  • 读取速度，GB/s
    16.2 left arrow 18.7
  • 写入速度，GB/s
    9.7 left arrow 15.9
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2636 left arrow 3594

Crucial Technology BLE4G3D1608DE1TX0. 4GB RAM的比较

Kingston HX316C10F/4 4GB
Corsair CM4X4GF2666Z16K4 4GB

Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
SK Hynix HMA42GR7AFR4N-UH 16GB
SK Hynix HMA42GR7AFR4N-UH 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB
V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 16G3200CL22 16GB
Micron Technology 16G3200CL22 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Kingston 9965596-019.B01G 4GB
Kingston 9965596-019.B01G 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Kingmax Semiconductor FSGG45F-D8KMB 8GB
Kingmax Semiconductor FSGG45F-D8KMB 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Corsair CMWX16GC3600C18W2D 16GB
Corsair CMWX16GC3600C18W2D 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Kingston KHX3200C20S4/16G 16GB
Kingston KHX3200C20S4/16G 16GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Corsair CMK64GX4M2E3200C16 32GB
Corsair CMK64GX4M2E3200C16 32GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
内存RAM
Corsair CM4X8GD3000C16K4D 8GB
Corsair CM4X8GD3000C16K4D 8GB
Corsair CM4X8GD3000C16K4 8GB
Corsair CM4X8GD3000C16K4 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
AMD R7S48G2400U2S 8GB
AMD R7S48G2400U2S 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology CT16G4SFS8266.C8FE 16GB
Crucial Technology CT16G4SFS8266.C8FE 16GB
内存RAM