Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Corsair CMD8GX4M2B3466C18 4GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

Corsair CMD8GX4M2B3466C18 4GB

Corsair CMD8GX4M2B3466C18 4GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Corsair CMD8GX4M2B3466C18 4GB

需要考虑的原因
Corsair CMD8GX4M2B3466C18 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 29

左右 -45% 更低的延时
更快的读取速度，GB/s

19 16.9

测试中的平均数值
更快的写入速度，GB/s

15.3 12.0

测试中的平均数值

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMD8GX4M2B3466C18 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 20
读取速度，GB/s

16.9 19.0
写入速度，GB/s

12.0 15.3
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2601 2939

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT32G4DFD832A.C16FE 32GB

Crucial Technology CT32G4DFD832A.C16FE 32GB