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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK128GX4M8B3000C16 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Corsair CMK128GX4M8B3000C16 16GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分
star star star star star
Corsair CMK128GX4M8B3000C16 16GB

Corsair CMK128GX4M8B3000C16 16GB

差异 规格 评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 40
    左右 28% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 11.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13% 更高的带宽
Corsair CMK128GX4M8B3000C16 16GB 需要考虑的原因
Corsair CMK128GX4M8B3000C16 16GB
报告一个错误

规格

完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK128GX4M8B3000C16 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 40
  • 读取速度，GB/s
    16.9 left arrow 13.4
  • 写入速度，GB/s
    12.0 left arrow 11.9
  • 内存带宽，mbps
    19200 left arrow 17000
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2601 left arrow 3014

Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较

SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB

Corsair CMK128GX4M8B3000C16 16GB RAM的比较

Panram International Corporation W4U2400PS-4G 4GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Corsair CMT64GX4M4K3600C16 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Corsair CMK128GX4M8B3000C16 16GB
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内存RAM
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内存RAM
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内存RAM
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Samsung M393B1K70CH0-CH9 8GB
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内存RAM
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内存RAM
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内存RAM
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Samsung M471B1G73DB0-YK0 8GB
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Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N
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