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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS16G4D240FSB.16FBR 16GB
比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Crucial Technology BLS16G4D240FSB.16FBR 16GB
总分
Crucial Technology BLS4G4D240FSE.8FBD 4GB
总分
Crucial Technology BLS16G4D240FSB.16FBR 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
31
左右 6% 更低的延时
需要考虑的原因
Crucial Technology BLS16G4D240FSB.16FBR 16GB
报告一个错误
更快的读取速度,GB/s
17
16.9
测试中的平均数值
更快的写入速度,GB/s
12.5
12.0
测试中的平均数值
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS16G4D240FSB.16FBR 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
31
读取速度,GB/s
16.9
17.0
写入速度,GB/s
12.0
12.5
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2601
3120
Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Crucial Technology BLS16G4D240FSB.16FBR 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Samsung M471B5273DH0-CH9 4GB
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G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-3000C16-16GISB 16GB
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Team Group Inc. TEAMGROUP-UD4-3200 8GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3000C15-4GRR 4GB
Samsung M4 70T2953EZ3-CE6 1GB
Corsair CMK32GX4M4C3000C16 8GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BLS16G4D26BFSE.16FE 16GB
Kingston KHX1600C9D3/8G 8GB
Crucial Technology BLM16G40C18U4BL.M8FB 16GB
报告一个错误
×
Bug description
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