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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4S240FSD.M8FADM 4GB
比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Crucial Technology BLS4G4S240FSD.M8FADM 4GB
总分
Crucial Technology BLS4G4D240FSE.8FBD 4GB
总分
Crucial Technology BLS4G4S240FSD.M8FADM 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
更快的读取速度,GB/s
16.9
15.4
测试中的平均数值
需要考虑的原因
Crucial Technology BLS4G4S240FSD.M8FADM 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
29
左右 -16% 更低的延时
更快的写入速度,GB/s
12.5
12.0
测试中的平均数值
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4S240FSD.M8FADM 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
25
读取速度,GB/s
16.9
15.4
写入速度,GB/s
12.0
12.5
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2601
2481
Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Crucial Technology BLS4G4S240FSD.M8FADM 4GB RAM的比较
TwinMOS 8DPT5MK8-TATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 8ATF1G64AZ-2G3A1 8GB
Samsung M4 70T2953EZ3-CE6 1GB
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Corsair CMW32GX4M2Z3600C18 16GB
Kingston KF2666C16D4/16G 16GB
Ramaxel Technology RMSA3270MB86H9F2400 4GB
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Samsung M378B5273CH0-CH9 4GB
Samsung M378A1K43CB2-CTD 8GB
Kingston HX318C10FK/4 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N
报告一个错误
×
Bug description
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