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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS8G4S26BFSD.16FBR2 8GB
比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Crucial Technology BLS8G4S26BFSD.16FBR2 8GB
总分
Crucial Technology BLS4G4D240FSE.8FBD 4GB
总分
Crucial Technology BLS8G4S26BFSD.16FBR2 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
30
左右 3% 更低的延时
更快的读取速度,GB/s
16.9
14.5
测试中的平均数值
更快的写入速度,GB/s
12.0
11.4
测试中的平均数值
需要考虑的原因
Crucial Technology BLS8G4S26BFSD.16FBR2 8GB
报告一个错误
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS8G4S26BFSD.16FBR2 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
30
读取速度,GB/s
16.9
14.5
写入速度,GB/s
12.0
11.4
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2601
2516
Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Crucial Technology BLS8G4S26BFSD.16FBR2 8GB RAM的比较
Kingston 9905403-090.A01LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
Ramos Technology RMB4GB58BCA3-13HC 4GB
Apacer Technology 78.DAGP2.4030B 16GB
Crucial Technology CT25664AA800.M16FG 2GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Samsung M378B1G73EB0-CK0 8GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
Samsung M471A5143SB1-CRC 4GB
Kingston 9965639-002.A01G 8GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Kingston XRGM6C-MIB 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology BLE8G4D26AFEA.16FAD 8GB
报告一个错误
×
Bug description
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