Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Crucial Technology CT8G4DFS632A.M4FE 8GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

Crucial Technology CT8G4DFS632A.M4FE 8GB

Crucial Technology CT8G4DFS632A.M4FE 8GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 33

左右 12% 更低的延时

Crucial Technology CT8G4DFS632A.M4FE 8GB

需要考虑的原因
Crucial Technology CT8G4DFS632A.M4FE 8GB

报告一个错误

更快的读取速度，GB/s

17.6 16.9

测试中的平均数值
更快的写入速度，GB/s

12.8 12.0

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology CT8G4DFS632A.M4FE 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 33
读取速度，GB/s

16.9 17.6
写入速度，GB/s

12.0 12.8
内存带宽，mbps

19200 25600

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2601 3166

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KHX16LC9/8GX 8GB

Kingston KHX16LC9/8GX 8GB

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Corsair CMSX8GX4M1A2400C16 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Corsair CMK32GX4M4C3000C15 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Samsung M395T2863QZ4-CF76 1GB

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Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

Kingston 9965596-019.B01G 4GB

Kingston 9965596-019.B01G 4GB