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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4SFS824A.C8FJ 8GB
比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Crucial Technology CT8G4SFS824A.C8FJ 8GB
总分
Crucial Technology BLS4G4D240FSE.8FBD 4GB
总分
Crucial Technology CT8G4SFS824A.C8FJ 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
62
左右 53% 更低的延时
更快的读取速度,GB/s
16.9
14.3
测试中的平均数值
更快的写入速度,GB/s
12.0
11.0
测试中的平均数值
需要考虑的原因
Crucial Technology CT8G4SFS824A.C8FJ 8GB
报告一个错误
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4SFS824A.C8FJ 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
62
读取速度,GB/s
16.9
14.3
写入速度,GB/s
12.0
11.0
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2601
2710
Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Crucial Technology CT8G4SFS824A.C8FJ 8GB RAM的比较
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Corsair CMT64GX4M4Z3600C18 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Crucial Technology BL16G36C16U4BL.M8FB1 16GB
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DSL Memory D4SS1G082SH21A-B 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
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Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905744-077.A00G 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Wilk Elektronik S.A. GY2666D464L16/8G 8GB
Samsung M471A1K43EB1-CWE 8GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
报告一个错误
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Bug description
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