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Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2400C16-16GFXR 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB vs G Skill Intl F4-2400C16-16GFXR 16GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分
star star star star star
G Skill Intl F4-2400C16-16GFXR 16GB

G Skill Intl F4-2400C16-16GFXR 16GB

差异 规格 评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 33
    左右 12% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 13.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 11.4
    测试中的平均数值
G Skill Intl F4-2400C16-16GFXR 16GB 需要考虑的原因
G Skill Intl F4-2400C16-16GFXR 16GB
报告一个错误

规格

完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2400C16-16GFXR 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 33
  • 读取速度，GB/s
    16.9 left arrow 13.5
  • 写入速度，GB/s
    12.0 left arrow 11.4
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-19200, 1.2V, CAS Supported: 9 11 13 15 16
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2601 left arrow 2588

Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较

SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB

G Skill Intl F4-2400C16-16GFXR 16GB RAM的比较

Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Crucial Technology BLS8G4D26BFSB.16FBD2 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2400C16-16GFXR 16GB
G Skill Intl F4-2400C16-16GFXR 16GB
内存RAM
Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
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内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3400C16-16GVK 16GB
G Skill Intl F4-3400C16-16GVK 16GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Samsung M393A2G40EB2-CTD 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Crucial Technology BL16G32C16S4B.M16FE 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
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内存RAM
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内存RAM
Samsung M471A5244CB0-CTD 4GB
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内存RAM
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内存RAM
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Nanya Technology M2Y51264TU88B0B-3C 512MB
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内存RAM
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