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Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2666C15-4GVK 4GB
比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB vs G Skill Intl F4-2666C15-4GVK 4GB
总分
Crucial Technology BLS4G4D240FSE.8FBD 4GB
总分
G Skill Intl F4-2666C15-4GVK 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
更快的读取速度,GB/s
16.9
15.9
测试中的平均数值
更快的写入速度,GB/s
12.0
11.8
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
G Skill Intl F4-2666C15-4GVK 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
29
左右 -21% 更低的延时
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2666C15-4GVK 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
24
读取速度,GB/s
16.9
15.9
写入速度,GB/s
12.0
11.8
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2601
2508
Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
G Skill Intl F4-2666C15-4GVK 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4DFRA266.C8FE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2666C15-4GVK 4GB
takeMS International AG TMS4GB364E081139EM 4GB
AMD R334G1339U2S 4GB
Samsung M471B1G73BH0-YK0 8GB
SK Hynix HMA81GS6AFR8N-UH 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMD32GX4M4B2400C10 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology CT8G4SFS824A.C8FBR1 8GB
Corsair CMK32GX5M2B5600C36 16GB
G Skill Intl F4-2133C15-4GVK 4GB
SK Hynix HMT325U6CFR8C-PB 2GB
Corsair CMR64GX4M4C3466C16 16GB
SK Hynix DDR2 800 2G 2GB
Hynix Semiconductor (Hyundai Electronics) DDR2 800 2G 2
Samsung M378B5773DH0-CH9 2GB
Corsair CMD64GX4M8A2800C16 8GB
Kingston 9905403-156.A00LF 2GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M471B5773CHS-CF8 2GB
Samsung M471B5273EB0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK64GX4M2A2666C16 32GB
Corsair CM2X1024-6400C4 1GB
V-GEN D4H4GL26A8TS5 4GB
报告一个错误
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Bug description
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