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Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2666C19-8GNT 8GB
比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB vs G Skill Intl F4-2666C19-8GNT 8GB
总分
Crucial Technology BLS4G4D240FSE.8FBD 4GB
总分
G Skill Intl F4-2666C19-8GNT 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
31
左右 6% 更低的延时
更快的读取速度,GB/s
16.9
16.7
测试中的平均数值
需要考虑的原因
G Skill Intl F4-2666C19-8GNT 8GB
报告一个错误
更快的写入速度,GB/s
13.6
12.0
测试中的平均数值
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2666C19-8GNT 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
31
读取速度,GB/s
16.9
16.7
写入速度,GB/s
12.0
13.6
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2601
3199
Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
G Skill Intl F4-2666C19-8GNT 8GB RAM的比较
A-DATA Technology DQKD1A08 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471A5143SB1-CRC 4GB
Corsair CMK16GX4M2D2400C14 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-4000C17-8GTZR 8GB
SK Hynix HYMP125S64CP8-S6 2GB
Kingston 9965669-008.A03G 16GB
Corsair CMK32GX5M2B5600C36 16GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
Kingston 99U5403-492.A00LF 8GB
G Skill Intl F4-2400C15-16GFX 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M471A2G43AB2-CWE 16GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-3600C16-16GTRGC 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Nanya Technology NT4GC64B8HD0NS-CG 4GB
TwinMOS 8DPT5MK8-TATP 2GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology CT8G4DFD8213.16FA11 8GB
Samsung M471B5673FH0-CF8 2GB
V-Color Technology Inc. TD416G26D819-VC 16GB
Samsung M471B5673FH0-CF8 2GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston HP32D4S2S8ME-16 16GB
报告一个错误
×
Bug description
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