Crucial Technology BLS4G4D240FSE.8FBD 4GB vs G Skill Intl F4-2800C15-8GVSB 8GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

G Skill Intl F4-2800C15-8GVSB 8GB

G Skill Intl F4-2800C15-8GVSB 8GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

G Skill Intl F4-2800C15-8GVSB 8GB

需要考虑的原因
G Skill Intl F4-2800C15-8GVSB 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 29

左右 -38% 更低的延时
更快的读取速度，GB/s

17.6 16.9

测试中的平均数值
更快的写入速度，GB/s

12.2 12.0

测试中的平均数值

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-2800C15-8GVSB 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 21
读取速度，GB/s

16.9 17.6
写入速度，GB/s

12.0 12.2
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2601 2994

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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G Skill Intl F4-3600C17-8GTZR 8GB

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Corsair CMX4GX3M2A1600C9 2GB

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Kingston ACR26D4S9S8ME-8 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Kingston 99U5665-004.A00G 4GB

Kingston 99U5665-004.A00G 4GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Corsair CMSX64GX4M4A2666C18 16GB

Corsair CMSX64GX4M4A2666C18 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

SK Hynix HMA81GR7MFR8N-UH 8GB

SK Hynix HMA81GR7MFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 99P5723-006.A00G 8GB

Kingston 99P5723-006.A00G 8GB