Crucial Technology BLS4G4D240FSE.8FBD 4GB vs G Skill Intl F4-2800C16-8GRR 8GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

G Skill Intl F4-2800C16-8GRR 8GB

G Skill Intl F4-2800C16-8GRR 8GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

G Skill Intl F4-2800C16-8GRR 8GB

需要考虑的原因
G Skill Intl F4-2800C16-8GRR 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 29

左右 -12% 更低的延时
更快的读取速度，GB/s

18.6 16.9

测试中的平均数值
更快的写入速度，GB/s

13.9 12.0

测试中的平均数值

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-2800C16-8GRR 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 26
读取速度，GB/s

16.9 18.6
写入速度，GB/s

12.0 13.9
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2601 3406

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMAA4GS6AJR8N-XN 32GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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G Skill Intl F4-2800C16-8GRR 8GB

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Apacer Technology 78.B1GET.AU00C 4GB

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Ramaxel Technology RMUA5210ME88HCF-3200 32GB

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AMD R538G1601U2S-UO 8GB

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Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB

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UMAX Technology D4-2133-4GB-512X8-L 4GB

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Kingston KVR16N11/8-SP 8GB

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Crucial Technology CT16G4DFD824A.C16FDD 16GB

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Samsung M378B5673EH1-CF8 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Corsair CMK32GX4M4E4133C19 8GB

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Kingston KVR800D2N6/2G 2GB

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G Skill Intl F4-4000C18-32GTZR 32GB

G Skill Intl F4-4000C18-32GTZR 32GB