RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C16-16GTZKO 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB vs G Skill Intl F4-3200C16-16GTZKO 16GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分
star star star star star
G Skill Intl F4-3200C16-16GTZKO 16GB

G Skill Intl F4-3200C16-16GTZKO 16GB

差异 规格 评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13% 更高的带宽
G Skill Intl F4-3200C16-16GTZKO 16GB 需要考虑的原因
G Skill Intl F4-3200C16-16GTZKO 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 29
    左右 -38% 更低的延时
  • 更快的读取速度，GB/s
    18.7 left arrow 16.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.3 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C16-16GTZKO 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 21
  • 读取速度，GB/s
    16.9 left arrow 18.7
  • 写入速度，GB/s
    12.0 left arrow 14.3
  • 内存带宽，mbps
    19200 left arrow 17000
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2601 left arrow 3437

Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较

SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB

G Skill Intl F4-3200C16-16GTZKO 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Smart Modular SMS4TDC8C1K0446FCG 8GB
Smart Modular SMS4TDC8C1K0446FCG 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB
Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C16-16GTZKO 16GB
G Skill Intl F4-3200C16-16GTZKO 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Corsair CMK32GX4M4A2400C14 8GB
Corsair CMK32GX4M4A2400C14 8GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
Samsung M471A2K43BB1-CTD 16GB
Samsung M471A2K43BB1-CTD 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-2400C15-8GTZRX 8GB
G Skill Intl F4-2400C15-8GTZRX 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3200C16-16GTZR 16GB
G Skill Intl F4-3200C16-16GTZR 16GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Vasekey M378A1K43BB2-CPB 8GB
Vasekey M378A1K43BB2-CPB 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
INTENSO M418039 8GB
INTENSO M418039 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Apacer Technology 78.CAGP7.AFW0C 8GB
Apacer Technology 78.CAGP7.AFW0C 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology BL8G32C16U4W.M8FE1 8GB
Crucial Technology BL8G32C16U4W.M8FE1 8GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Kingston XJV223-MIE 16GB
Kingston XJV223-MIE 16GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
AMD R748G2400S2S 8GB
AMD R748G2400S2S 8GB
内存RAM