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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Micron Technology 16ATF1G64AZ-2G1A1 8GB
总分
Crucial Technology BLS4G4D240FSE.8FBD 4GB
总分
Micron Technology 16ATF1G64AZ-2G1A1 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
42
左右 31% 更低的延时
更快的读取速度,GB/s
16.9
12.7
测试中的平均数值
更快的写入速度,GB/s
12.0
10.2
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
Micron Technology 16ATF1G64AZ-2G1A1 8GB
报告一个错误
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
42
读取速度,GB/s
16.9
12.7
写入速度,GB/s
12.0
10.2
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2601
2701
Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BL8G30C15U4W.8FE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3600C19-8GVRB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Kingston KVR24N17S8/4 4GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393A1G40DB1-CRC 8GB
G Skill Intl F4-3600C19-16GSXKB 16GB
Crucial Technology CT16G4DFRA266.C8FB 16GB
Samsung 1600 CL10 Series 8GB
King Tiger Technology Tigo-2400MHz-4G 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M393A2K40CB2-CTD 16GB
Kingston KF552C40-16 16GB
G Skill Intl F4-2666C19-16GIS 16GB
Samsung M393B1K70QB0-CK0 8GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Mushkin MRA4S300GJJM16G 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLS8G4S240FSD.M16FAD 8GB
报告一个错误
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Bug description
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