Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Micron Technology 18ADF2G72PZ-2G3B1 16GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

Micron Technology 18ADF2G72PZ-2G3B1 16GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 32

左右 9% 更低的延时
更快的读取速度，GB/s

16.9 11.8

测试中的平均数值
更快的写入速度，GB/s

12.0 8.7

测试中的平均数值

Micron Technology 18ADF2G72PZ-2G3B1 16GB

需要考虑的原因
Micron Technology 18ADF2G72PZ-2G3B1 16GB

报告一个错误

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 32
读取速度，GB/s

16.9 11.8
写入速度，GB/s

12.0 8.7
内存带宽，mbps

19200 19200

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2601 2585

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3200C16-16GSXKB 16GB

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Chun Well Technology Holding Limited MD4U0840180BCW 8GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Apacer Technology 78.C1GM3.C7Z0C 8GB

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Kingston XRMWRN-MIE 16GB

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Maxsun MSD48G26Q3 8GB

Maxsun MSD48G26Q3 8GB

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Mushkin 99[2/7/4]191F 4GB

Mushkin 99[2/7/4]191F 4GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Kingston 99U5702-101.A00G 8GB

Kingston 99U5702-101.A00G 8GB

SpecTek Incorporated PSD34G13332 4GB

SpecTek Incorporated PSD34G13332 4GB

Crucial Technology CT8G4SFS832A.M8FRS 8GB

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Team Group Inc. ZEUS-2133 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB

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