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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Micron Technology 36ASF4G72PZ-2G3B1 32GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分
star star star star star
Micron Technology 36ASF4G72PZ-2G3B1 32GB

Micron Technology 36ASF4G72PZ-2G3B1 32GB

差异 规格 评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 52
    左右 44% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 10
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 7.7
    测试中的平均数值
Micron Technology 36ASF4G72PZ-2G3B1 32GB 需要考虑的原因
Micron Technology 36ASF4G72PZ-2G3B1 32GB
报告一个错误

规格

完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 52
  • 读取速度，GB/s
    16.9 left arrow 10.0
  • 写入速度，GB/s
    12.0 left arrow 7.7
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2601 left arrow 2260

Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较

SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB

Micron Technology 36ASF4G72PZ-2G3B1 32GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
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内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
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内存RAM
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A-DATA Technology DQKD1A08 1GB
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Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Team Group Inc. TEAMGROUP-SD4-2400 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
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Samsung M4 70T3354BZ0-CCC 256MB
内存RAM
Unigen Corporation U51U6411P8DU-BD1 4GB
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内存RAM
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Patriot Memory (PDP Systems) PSD34G16002 4GB
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内存RAM
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Kingston 99U5474-010.A00LF 2GB
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内存RAM
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takeMS International AG TMS2GB264D083805EV 2GB
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Corsair CMK32GX4M4A2133C15 8GB
内存RAM
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB
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内存RAM
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SK Hynix HYMP31GF72CMP4D5Y5 8GB
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G Skill Intl F4-3600C16-16GTRG 16GB
内存RAM
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Ramaxel Technology RMT3160ED58E9W1600 4GB
G Skill Intl F4-3600C19-8GSXWB 8GB
G Skill Intl F4-3600C19-8GSXWB 8GB
内存RAM