Crucial Technology BLS4G4D240FSE.8FBD 4GB vs NSITEXE Inc Visenta 16GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

NSITEXE Inc Visenta 16GB

NSITEXE Inc Visenta 16GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 58

左右 50% 更低的延时
更快的写入速度，GB/s

12.0 8.2

测试中的平均数值

NSITEXE Inc Visenta 16GB

需要考虑的原因
NSITEXE Inc Visenta 16GB

报告一个错误

更快的读取速度，GB/s

18 16.9

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

NSITEXE Inc Visenta 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 58
读取速度，GB/s

16.9 18.0
写入速度，GB/s

12.0 8.2
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2601 2025

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

NSITEXE Inc Visenta 16GB

NSITEXE Inc Visenta 16GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 36ASF2G72PZ-2G3A3 16GB

Micron Technology 36ASF2G72PZ-2G3A3 16GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Kingston KHX3200C16D4/16GX 16GB

Kingston KHX3200C16D4/16GX 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

A-DATA Technology DDR4 4133 2OZ 8GB

A-DATA Technology DDR4 4133 2OZ 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology CT16G4DFD832A.C16FJ 16GB

Crucial Technology CT16G4DFD832A.C16FJ 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-4000C18-8GTRG 8GB

G Skill Intl F4-4000C18-8GTRG 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Micron Technology 8ATF1G64AZ-2G6H1 8GB

Micron Technology 8ATF1G64AZ-2G6H1 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMK32GX4M2E3200C16 16GB

Corsair CMK32GX4M2E3200C16 16GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Ramaxel Technology RMSA3260MB78HAF2400 8GB

Ramaxel Technology RMSA3260MB78HAF2400 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F4-4000C17-16GTRGB 16GB

G Skill Intl F4-4000C17-16GTRGB 16GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Micron Technology M471A1K43CB1-CTD 8GB

Micron Technology M471A1K43CB1-CTD 8GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Corsair CM4X4GF2133C15S2 4GB

Corsair CM4X4GF2133C15S2 4GB