Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Panram International Corporation W4N2666PS-8G 8GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

Panram International Corporation W4N2666PS-8G 8GB

Panram International Corporation W4N2666PS-8G 8GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

Panram International Corporation W4N2666PS-8G 8GB

需要考虑的原因
Panram International Corporation W4N2666PS-8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 29

左右 -45% 更低的延时
更快的读取速度，GB/s

17.9 16.9

测试中的平均数值
更快的写入速度，GB/s

14.3 12.0

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Panram International Corporation W4N2666PS-8G 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 20
读取速度，GB/s

16.9 17.9
写入速度，GB/s

12.0 14.3
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2601 3127

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Golden Empire CL15-15-15 D4-2400 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

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G Skill Intl F4-3600C19-8GVSB 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Samsung M471A2K43BB1-CTD 16GB

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Samsung 1600 CL10 Series 8GB

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G Skill Intl F4-3000C16-8GTRS 8GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

SK Hynix HMA82GS6DJR8N-VK 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Micron Technology 4ATF51264AZ-3G2J1 4GB

Micron Technology 4ATF51264AZ-3G2J1 4GB