Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Samsung M393A2K40BB2-CTD 16GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

Samsung M393A2K40BB2-CTD 16GB

Samsung M393A2K40BB2-CTD 16GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 65

左右 55% 更低的延时
更快的读取速度，GB/s

16.9 8.5

测试中的平均数值
更快的写入速度，GB/s

12.0 5.8

测试中的平均数值

Samsung M393A2K40BB2-CTD 16GB

需要考虑的原因
Samsung M393A2K40BB2-CTD 16GB

报告一个错误

更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M393A2K40BB2-CTD 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 65
读取速度，GB/s

16.9 8.5
写入速度，GB/s

12.0 5.8
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2601 1981

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Teikon TMA851S6AFR6N-UHHC 4GB

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SK Hynix HMT351S6CFR8C-PB 4GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

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Crucial Technology CT8G4DFRA266.C8FJ 8GB

Corsair CML8GX3M2A1600C9 4GB

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Crucial Technology CT16G4SFRA32A.C16FP 16GB

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Samsung M393B1K70CH0-CH9 8GB

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Corsair CMK128GX4M8A2666C16 16GB

Corsair CMK128GX4M8A2666C16 16GB

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V-Color Technology Inc. TA48G30S815GK 8GB